advanced power n and p-channel enhancement electronics corp. mode power mosfet simple drive requirement n-ch bv dss 35v good thermal performance r ds(on) 30m fast switching performance i d 15a p-ch bv dss -35v r ds(on) 48m description i d -12a absolute maximum ratings symbol parameter rating units n-channel p-channel v ds drain-source voltage 35 -35 v v gs gate-source voltage 20 20 v i d @t c =25 continuous drain current 3 15 -12 a i d @t c =100 continuous drain current 3 9 -7 a i dm pulsed drain current 1 50 -50 a p d @t c =25 total power dissipation 10.4 w linear derating factor 0.083 w/ t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol value units rthj-c thermal resistance junction-case 3 max. 12 /w rthj-a thermal resistance junction-ambient 3 max. 110 /w data and specifications subject to change without notice parameter 200222053 thermal data AP4511GH pb free plating product g2 d2 s2 g1 d1 s1 the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. s1 to-252-4l g1 s2 g2 d1/d2
n-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 35 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.03 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =8a - - 30 m v gs =4.5v, i d =6a - - 40 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =8a - 13 - s i dss drain-source leakage current (t j =25 o c) v ds =35v, v gs =0v - - 1 ua drain-source leakage current (t j =150 o c) v ds =28v, v gs =0v - - 25 ua i gss gate-source leakage v gs =20v - - na q g total gate charge 2 i d =8a - 11 18 nc q gs gate-source charge v ds =28v - 3 - nc q gd gate-drain ("miller") charge v gs =4.5v - 6 - nc t d(on) turn-on delay time 2 v ds =18v - 12 - ns t r rise time i d =1a - 7 - ns t d(off) turn-off delay time r g =3.3 , v gs =10v - 22 - ns t f fall time r d =18 -6- ns c iss input capacitance v gs =0v - 830 1330 pf c oss output capacitance v ds =25v - 150 - pf c rss reverse transfer capacitance f=1.0mhz - 110 - pf r g gate resistance f=1.0mhz - 1.1 1.7 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =8a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =8a, v gs =0v - 18 - ns q rr reverse recovery charge di/dt=100a/s - 12 - nc AP4511GH 100
AP4511GH p-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -35 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 ,i d =-1ma - -0.03 - v/ r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-6a - - 48 m v gs =-4.5v, i d =-4a - - 70 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-6a - 10 - s i dss drain-source leakage current (t j =25 o c) v ds =-35v, v gs =0v - - -1 ua drain-source leakage current (t j =150 o c) v ds =-28v, v gs =0v - - -25 ua i gss gate-source leakage v gs =20v - - na q g total gate charge 2 i d =-6a - 10 19 nc q gs gate-source charge v ds =-28v - 2 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 6 - nc t d(on) turn-on delay time 2 v ds =-18v - 10 - ns t r rise time i d =-1a - 6 - ns t d(off) turn-off delay time r g =3.3 ,v gs =-10v - 26 - ns t f fall time r d =18 -7- ns c iss input capacitance v gs =0v - 690 1100 pf c oss output capacitance v ds =-25v - 165 - pf c rss reverse transfer capacitance f=1.0mhz - 130 - pf r g gate resistance f=1.0mhz - 5 7.5 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-6a, v gs =0v - - -1.2 v t rr reverse recovery time 2 i s =-6a, v gs =0v - 20 - ns q rr reverse recovery charge di/dt=-100a/s - 12 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. 3.n-ch , p-ch are same . 100
n-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature AP4511GH 0 10 20 30 40 50 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0 2 4 6 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0 10 20 30 40 50 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 10v 7.0v 5.0v 4.5v v g =3.0v 20 25 30 35 40 45 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =6a t c =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =8a v g =10v 0.5 0.8 1.1 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
AP4511GH n-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform q v g 4.5v q gs q gd q g charge 10 100 1000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss 0 10 20 30 40 02468 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) 100us 1ms 10ms 100ms dc t c =25 o c single pulse 0 2 4 6 8 10 12 14 0 5 10 15 20 25 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =8a v ds = 28v 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
p-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature AP4511GH 30 50 70 90 246810 -v gs ,gate-to-source voltage (v) r ds(on) (m ) i d =-4a t c =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =-6a v g = - 10v 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v) 0 10 20 30 40 50 012345 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c -10v -7.0v -5.0v -4.5v v g = - 3.0v 0 10 20 30 40 50 012345 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c = 150 o c -10v -7.0v -5.0v -4.5v v g = - 3.0v 0 1 2 3 4 5 6 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c
AP4511GH p-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform q v g -4.5v q gs q gd q g charge 0 10 20 30 02468 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds =-5v 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) 100us 1ms 10ms 100ms dc t c =25 o c single pulse 100 1000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss 0 4 8 12 16 0 5 10 15 20 25 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d =-6a v ds = - 28v 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
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